Featuring the industry’s highest field density and delivering higher capacity and better energy efficiency than previous generations of Micron NAND, enabling best-in-class support for the most data-intensive use cases, from client to cloud To be.
Scott DeBoer, executive vice president of technology and products at Micron, said, “Micron’s 232-layer NAND storage is a watershed moment for innovation, the first evidence of its ability to scale 3D NAND to more than 200 layers in production ” “This unprecedented technology requires extensive innovation, including high aspect ratio structures, novel material advancements and advanced process capabilities to create leading-edge design enhancements that are based on our market-leading 176-layer NAND technology.”
As more data is generated, customers have to expand their storage capacity and performance while reducing energy consumption and meeting more stringent environmental sustainability requirements. The 232-layer NAND technology is intended to support the high-performance storage needed in advanced solutions and real-time services.
The technology node enables the introduction of the industry’s fastest NAND I/O speed 2.4 gigabytes per second (GB/s) to meet the low-latency and high-throughput requirements of data-centric workloads such as artificial intelligence and machine learning unstructured database and real-time analytics, and cloud computing.
This speed represents up to 50% faster data transfer than the fastest interface enabled on Micron’s 176-layer node.
Micron 232-layer NAND also provides 100% higher write bandwidth and over 75% higher read bandwidth than the previous generation. These copy-dead benefits translate into performance and energy efficiency gains in SSD and embedded NAND solutions.
In addition, 232-layer NAND introduces the world’s first six-plane TLC production NAND. It has the most aircraft per die of any TLC flash and each plane has independent reading capabilities. The combination of high I/O speeds, read and write latency, and Micron’s six-plane architecture provide best-in-class data transfers in multiple configurations. This structure ensures fewer collisions between write and read commands and improves system-level quality-of-service.
Micron’s 232-layer NAND is the first production to enable NV-LPDDR4, a low-voltage interface that delivers per-bit transfer savings of over 30% compared to prior I/O interfaces. As a result, 232-layer NAND solutions provide support for mobile applications and in data center and intelligent edge deployments that must balance improved performance with lower power consumption. The interface is also backward compatible to support legacy controllers and systems.
The compact form factor of 232-layer NAND provides customers with flexibility in their design, while enabling the highest TLC densities per square millimeter (at 14.6 Gb/mm2). The regional density is 35% to 100% higher than existing TLC products being shipped today.
Shipping in a new 11.5mm x 13.5mm package, the 232-layer NAND has a 28% smaller package size than previous Micron generations. Minimizes board space to enable a diverse set of greater density deployments in a smaller footprint.
Sumit Sadana said, “Micron continues to maintain technology leadership with first-in-market advances in NAND layer count, leading to longer battery life and more compact storage for mobile devices, improved performance in cloud computing, and faster AI models. Enables benefits such as training.” , Chief Business Officer at Micron. “Our 232-layer NAND is the new foundation and standard for end-to-end storage innovation underpinning digital transformation across industries.”
Micron’s 232-layer NAND is shipping to customers in component form and through its Crucial SSD consumer product line.